TY - JOUR
T1 - AdaOPC 2.0: Enhanced Adaptive Mask Optimization Framework for via Layers
T2 - Enhanced Adaptive Mask Optimization Framework for via Layers
AU - Zhao, Wenqian
AU - Yao, Xufeng
AU - Yin, Shuo
AU - Bai, Yang
AU - Yu, Ziyang
AU - Ma, Yuzhe
AU - Yu, Bei
AU - Wong, Martin D.F.
N1 - This work was supported in part by the Research Grants Council of Hong Kong, SAR, under Project CUHK14208021.
PY - 2024/9
Y1 - 2024/9
N2 - Optical proximity correction (OPC) is a widely used technique to enhance the printability of designs in various foundaries. Recently, there has been a growing interest in using rigorous numerical optimization and machine learning to improve the robustness and efficiency of OPC. Our research focuses on developing a self-adaptive OPC framework that leverages the properties of pattern distribution and repetition in design layouts to optimize the correction process. We observe that different subregions in a design layer have varying pattern complexities, and many patterns repeat themselves throughout the layout. By exploiting these properties, we propose a framework that adaptively selects the most suitable OPC solvers from an extensible pool to optimize the correction process for each pattern based on its complexity. This approach allows for a co-optimization of speed and accuracy. Additionally, we introduce a graph-based dynamic pattern library that reuses optimized masks for repeated patterns, further accelerating the OPC flow. Our experimental results demonstrate a significant improvement in both performance and efficiency using our proposed framework.
AB - Optical proximity correction (OPC) is a widely used technique to enhance the printability of designs in various foundaries. Recently, there has been a growing interest in using rigorous numerical optimization and machine learning to improve the robustness and efficiency of OPC. Our research focuses on developing a self-adaptive OPC framework that leverages the properties of pattern distribution and repetition in design layouts to optimize the correction process. We observe that different subregions in a design layer have varying pattern complexities, and many patterns repeat themselves throughout the layout. By exploiting these properties, we propose a framework that adaptively selects the most suitable OPC solvers from an extensible pool to optimize the correction process for each pattern based on its complexity. This approach allows for a co-optimization of speed and accuracy. Additionally, we introduce a graph-based dynamic pattern library that reuses optimized masks for repeated patterns, further accelerating the OPC flow. Our experimental results demonstrate a significant improvement in both performance and efficiency using our proposed framework.
KW - Allocation
KW - design for manufacturability
KW - design reuse
KW - layout
KW - mask optimization
KW - optical proximity correction (OPC)
UR - http://www.scopus.com/inward/record.url?scp=85188540877&partnerID=8YFLogxK
U2 - 10.1109/TCAD.2024.3378600
DO - 10.1109/TCAD.2024.3378600
M3 - Journal article
AN - SCOPUS:85188540877
SN - 0278-0070
VL - 43
SP - 2674
EP - 2686
JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IS - 9
ER -