Acceptors in undoped gallium antimonide

M. K. Lui; C. C. Ling; X. D. Chen; K. W. Cheah; K. F. Li

doi:10.1557/proc-799-z5.29

Acceptors in undoped gallium antimonide

M. K. Lui, C. C. Ling^*, X. D. Chen, K. W. Cheah, K. F. Li

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photoluminescence (PL). The TDH data reveals four acceptor levels (having ionization energies of 7meV, 32meV, 89meV and 123meV) in the as-grown undoped GaSb samples. The 32meV and the 89meV levels were attributed to the Ga_Sb defect and the V_Ga-related defect. The Ga _Sb defect was found to be the important acceptor responsible for the p-type nature of the present undoped GaSb samples because of its abundance and its low ionization energy. This defect was thermally stable after the 500°C annealing. Similar to the non-irradiated samples, the 777meV and the 800meV PL signals were also observed in the electron irradiated undoped GaSb samples. The decrease of the two peaks' intensities with respect to the electron irradiation dosage reveals the introduction of a non-radiative defect during the electron irradiation process, which competes with the transition responsible for the 777meV and the 800meV PL peaks.

Original language	English
Pages (from-to)	59-63
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	799
DOIs	https://doi.org/10.1557/proc-799-z5.29
Publication status	Published - 2003
Event	Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States Duration: 1 Dec 2003 → 4 Dec 2003

Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{568144a16fb848c693226776469e7930,

title = "Acceptors in undoped gallium antimonide",

abstract = "Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photoluminescence (PL). The TDH data reveals four acceptor levels (having ionization energies of 7meV, 32meV, 89meV and 123meV) in the as-grown undoped GaSb samples. The 32meV and the 89meV levels were attributed to the GaSb defect and the VGa-related defect. The Ga Sb defect was found to be the important acceptor responsible for the p-type nature of the present undoped GaSb samples because of its abundance and its low ionization energy. This defect was thermally stable after the 500°C annealing. Similar to the non-irradiated samples, the 777meV and the 800meV PL signals were also observed in the electron irradiated undoped GaSb samples. The decrease of the two peaks' intensities with respect to the electron irradiation dosage reveals the introduction of a non-radiative defect during the electron irradiation process, which competes with the transition responsible for the 777meV and the 800meV PL peaks.",

author = "Lui, {M. K.} and Ling, {C. C.} and Chen, {X. D.} and Cheah, {K. W.} and Li, {K. F.}",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications ; Conference date: 01-12-2003 Through 04-12-2003",

year = "2003",

doi = "10.1557/proc-799-z5.29",

language = "English",

volume = "799",

pages = "59--63",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

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TY - JOUR

T1 - Acceptors in undoped gallium antimonide

AU - Lui, M. K.

AU - Ling, C. C.

AU - Chen, X. D.

AU - Cheah, K. W.

AU - Li, K. F.

PY - 2003

Y1 - 2003

N2 - Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photoluminescence (PL). The TDH data reveals four acceptor levels (having ionization energies of 7meV, 32meV, 89meV and 123meV) in the as-grown undoped GaSb samples. The 32meV and the 89meV levels were attributed to the GaSb defect and the VGa-related defect. The Ga Sb defect was found to be the important acceptor responsible for the p-type nature of the present undoped GaSb samples because of its abundance and its low ionization energy. This defect was thermally stable after the 500°C annealing. Similar to the non-irradiated samples, the 777meV and the 800meV PL signals were also observed in the electron irradiated undoped GaSb samples. The decrease of the two peaks' intensities with respect to the electron irradiation dosage reveals the introduction of a non-radiative defect during the electron irradiation process, which competes with the transition responsible for the 777meV and the 800meV PL peaks.

AB - Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photoluminescence (PL). The TDH data reveals four acceptor levels (having ionization energies of 7meV, 32meV, 89meV and 123meV) in the as-grown undoped GaSb samples. The 32meV and the 89meV levels were attributed to the GaSb defect and the VGa-related defect. The Ga Sb defect was found to be the important acceptor responsible for the p-type nature of the present undoped GaSb samples because of its abundance and its low ionization energy. This defect was thermally stable after the 500°C annealing. Similar to the non-irradiated samples, the 777meV and the 800meV PL signals were also observed in the electron irradiated undoped GaSb samples. The decrease of the two peaks' intensities with respect to the electron irradiation dosage reveals the introduction of a non-radiative defect during the electron irradiation process, which competes with the transition responsible for the 777meV and the 800meV PL peaks.

UR - http://www.scopus.com/inward/record.url?scp=3042546494&partnerID=8YFLogxK

U2 - 10.1557/proc-799-z5.29

DO - 10.1557/proc-799-z5.29

M3 - Conference article

AN - SCOPUS:3042546494

SN - 0272-9172

VL - 799

SP - 59

EP - 63

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications

Y2 - 1 December 2003 through 4 December 2003

ER -

Acceptors in undoped gallium antimonide

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