A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon

M. L. Gong*, J. X. Shi, Rick W K WONG, Kwok Keung SHIU, W. H. Zheng, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We report a novel electrochemical doping (ECD) approach for porous silicon (PS) with rare earths, constant-potential electrolysis, and a new electrolyte solution system. The doped erbium concentration was high: up to 1021 /cm3. After this new ECD treatment, PS:Er was found to emit much more intense room-temperature visible photoluminescence than both the porous silicon control and the PS:Er prepared by constant-current ECD. Room-temperature IR photoluminescence around 1.54 μm was observed for the first time without any post-doping annealing.

Original languageEnglish
Pages (from-to)107-110
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume68
Issue number1
DOIs
Publication statusPublished - 1999

Scopus Subject Areas

  • Chemistry(all)
  • Materials Science(all)

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