A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon

M. L. Gong; J. X. Shi; Rick W K WONG; Kwok Keung SHIU; W. H. Zheng; Kok Wai CHEAH

doi:10.1007/s003390050862

A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon

M. L. Gong^*, J. X. Shi, Rick W K WONG, Kwok Keung SHIU, W. H. Zheng, Kok Wai CHEAH

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › peer-review

15 Citations (Scopus)

Abstract

We report a novel electrochemical doping (ECD) approach for porous silicon (PS) with rare earths, constant-potential electrolysis, and a new electrolyte solution system. The doped erbium concentration was high: up to 10²¹ /cm³. After this new ECD treatment, PS:Er was found to emit much more intense room-temperature visible photoluminescence than both the porous silicon control and the PS:Er prepared by constant-current ECD. Room-temperature IR photoluminescence around 1.54 μm was observed for the first time without any post-doping annealing.

Original language	English
Pages (from-to)	107-110
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	68
Issue number	1
DOIs	https://doi.org/10.1007/s003390050862
Publication status	Published - 1999

Scopus Subject Areas

Chemistry(all)
Materials Science(all)

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@article{5f80e5c8d2c44a9abc788a2a97778251,

title = "A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon",

abstract = "We report a novel electrochemical doping (ECD) approach for porous silicon (PS) with rare earths, constant-potential electrolysis, and a new electrolyte solution system. The doped erbium concentration was high: up to 1021 /cm3. After this new ECD treatment, PS:Er was found to emit much more intense room-temperature visible photoluminescence than both the porous silicon control and the PS:Er prepared by constant-current ECD. Room-temperature IR photoluminescence around 1.54 μm was observed for the first time without any post-doping annealing.",

author = "Gong, {M. L.} and Shi, {J. X.} and WONG, {Rick W K} and SHIU, {Kwok Keung} and Zheng, {W. H.} and CHEAH, {Kok Wai}",

year = "1999",

doi = "10.1007/s003390050862",

language = "English",

volume = "68",

pages = "107--110",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

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TY - JOUR

T1 - A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon

AU - Gong, M. L.

AU - Shi, J. X.

AU - WONG, Rick W K

AU - SHIU, Kwok Keung

AU - Zheng, W. H.

AU - CHEAH, Kok Wai

PY - 1999

Y1 - 1999

N2 - We report a novel electrochemical doping (ECD) approach for porous silicon (PS) with rare earths, constant-potential electrolysis, and a new electrolyte solution system. The doped erbium concentration was high: up to 1021 /cm3. After this new ECD treatment, PS:Er was found to emit much more intense room-temperature visible photoluminescence than both the porous silicon control and the PS:Er prepared by constant-current ECD. Room-temperature IR photoluminescence around 1.54 μm was observed for the first time without any post-doping annealing.

AB - We report a novel electrochemical doping (ECD) approach for porous silicon (PS) with rare earths, constant-potential electrolysis, and a new electrolyte solution system. The doped erbium concentration was high: up to 1021 /cm3. After this new ECD treatment, PS:Er was found to emit much more intense room-temperature visible photoluminescence than both the porous silicon control and the PS:Er prepared by constant-current ECD. Room-temperature IR photoluminescence around 1.54 μm was observed for the first time without any post-doping annealing.

UR - http://www.scopus.com/inward/record.url?scp=0032793390&partnerID=8YFLogxK

U2 - 10.1007/s003390050862

DO - 10.1007/s003390050862

M3 - Journal article

AN - SCOPUS:0032793390

SN - 0947-8396

VL - 68

SP - 107

EP - 110

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon

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