Abstract
首次报道了用恒电位电解法将铒、钇共掺入多孔硅 (poroussilicon ,PS)中 ,经高温退火处理后 ,观察到了在近红外区(1 5 4μm)室温下较强的光致发光 (photoluminescence ,PL) ,并与掺铒多孔硅 (erbium dopedporoussilicon ,PS∶Er)做了比较 ,发现钇的共掺入对掺铒多孔硅体系 1 5 4μm发射起了增强作用 .研究了铒、钇共掺杂多孔硅 (erbiumandyttriumco dopedporoussilicon ,PS∶Er ,Y)光致发光强度随温度的变化 ,发现PS∶Er与Si∶Er材料相似 ,有较强的温度猝灭效应 ,而PS∶Er ,Y体系的PL强度随温度升高趋于平稳 ,且有增强的趋势 ,受温度影响不明显 ,并初步探讨了其发光机制.
Translated title of the contribution | Enhanced 1.54 μm luminescence from erbium and yttrium co-doped porous silicon |
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Original language | Chinese (Simplified) |
Pages (from-to) | 1430-1433 |
Number of pages | 4 |
Journal | 化学学报 |
Volume | 61 |
Issue number | 9 |
Publication status | Published - Sept 2003 |
Scopus Subject Areas
- General Chemistry
User-Defined Keywords
- Co-doping
- Erbium
- Near infrared photoluminescence
- Porous silicon
- Yttrium
- 多孔硅
- 铒
- 钇
- 共掺杂
- 近红外光致发光