钇对掺饵多孔硅体系1.54μm发光的增强作用

Translated title of the contribution: Enhanced 1.54 μm luminescence from erbium and yttrium co-doped porous silicon

张晓霞*, 谢国伟, 石建新, 罗莉, 黄伟国, 龚孟濂

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

2 Citations (Scopus)

Abstract

首次报道了用恒电位电解法将铒、钇共掺入多孔硅 (poroussilicon ,PS)中 ,经高温退火处理后 ,观察到了在近红外区(1 5 4μm)室温下较强的光致发光 (photoluminescence ,PL) ,并与掺铒多孔硅 (erbium dopedporoussilicon ,PS∶Er)做了比较 ,发现钇的共掺入对掺铒多孔硅体系 1 5 4μm发射起了增强作用 .研究了铒、钇共掺杂多孔硅 (erbiumandyttriumco dopedporoussilicon ,PS∶Er ,Y)光致发光强度随温度的变化 ,发现PS∶Er与Si∶Er材料相似 ,有较强的温度猝灭效应 ,而PS∶Er ,Y体系的PL强度随温度升高趋于平稳 ,且有增强的趋势 ,受温度影响不明显 ,并初步探讨了其发光机制.
Translated title of the contributionEnhanced 1.54 μm luminescence from erbium and yttrium co-doped porous silicon
Original languageChinese (Simplified)
Pages (from-to)1430-1433
Number of pages4
Journal化学学报
Volume61
Issue number9
Publication statusPublished - Sept 2003

Scopus Subject Areas

  • General Chemistry

User-Defined Keywords

  • Co-doping
  • Erbium
  • Near infrared photoluminescence
  • Porous silicon
  • Yttrium
  • 多孔硅
  • 共掺杂
  • 近红外光致发光

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