氧在InP(111)面上吸附的CLS、AES和XPS研究

戴道宣; Furong 朱福荣

氧在InP(111)面上吸附的CLS、AES和XPS研究

Translated title of the contribution: A Study of Oxygen Adsorption of InP (111) by Using CLS, AES and XPS

戴道宣
, 朱福荣

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

Abstract

用CLS、ARS和XPS研究了氧在IBA法制备的InP（111）面上的吸附及早期氧化。低暴氧量时氧已被表面Iｎ原子吸附，到10⁵LO₂时可观测到铟的氧化物，而磷的氧化物则在10⁸LO₂的高暴氧量下出现。初步探讨了吸附和氧化机理。

CLS, AES and XPS measurements have been used to study oxygen adsorption onto the ion bombarded and annealed InP(111) surface and the initial stages of oxidation. At low oxygen exposure, it has been observed that oxygen is adsorbed on sites above the In island, oxide of In can be observed at exposure of 10⁵ LO₂, but oxide of P begins to appear at high exposure of 10⁸ LO₂. The mechanism of adsorption and oxidation has been discussed briefly.

Translated title of the contribution	A Study of Oxygen Adsorption of InP (111) by Using CLS, AES and XPS
Original language	Chinese (Simplified)
Pages (from-to)	190-194
Number of pages	5
Journal	半导体学报
Volume	6
Issue number	2
Publication status	Published - Mar 1985

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@article{9d76f3c1f4e041d4bdc5c949706df155,

title = "氧在InP(111)面上吸附的CLS、AES和XPS研究",

abstract = "用CLS、ARS和XPS研究了氧在IBA法制备的InP（111）面上的吸附及早期氧化。低暴氧量时氧已被表面Iｎ原子吸附，到105LO2时可观测到铟的氧化物，而磷的氧化物则在108LO2的高暴氧量下出现。初步探讨了吸附和氧化机理。CLS, AES and XPS measurements have been used to study oxygen adsorption onto the ion bombarded and annealed InP(111) surface and the initial stages of oxidation. At low oxygen exposure, it has been observed that oxygen is adsorbed on sites above the In island, oxide of In can be observed at exposure of 105 LO2, but oxide of P begins to appear at high exposure of 108 LO2. The mechanism of adsorption and oxidation has been discussed briefly.",

author = "戴道宣 and 朱福荣",

year = "1985",

month = mar,

language = "Chinese (Simplified)",

volume = "6",

pages = "190--194",

journal = "半导体学报",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "2",

}

TY - JOUR

T1 - 氧在InP(111)面上吸附的CLS、AES和XPS研究

AU - 戴道宣, null

AU - 朱福荣, null

PY - 1985/3

Y1 - 1985/3

N2 - 用CLS、ARS和XPS研究了氧在IBA法制备的InP（111）面上的吸附及早期氧化。低暴氧量时氧已被表面Iｎ原子吸附，到105LO2时可观测到铟的氧化物，而磷的氧化物则在108LO2的高暴氧量下出现。初步探讨了吸附和氧化机理。CLS, AES and XPS measurements have been used to study oxygen adsorption onto the ion bombarded and annealed InP(111) surface and the initial stages of oxidation. At low oxygen exposure, it has been observed that oxygen is adsorbed on sites above the In island, oxide of In can be observed at exposure of 105 LO2, but oxide of P begins to appear at high exposure of 108 LO2. The mechanism of adsorption and oxidation has been discussed briefly.

AB - 用CLS、ARS和XPS研究了氧在IBA法制备的InP（111）面上的吸附及早期氧化。低暴氧量时氧已被表面Iｎ原子吸附，到105LO2时可观测到铟的氧化物，而磷的氧化物则在108LO2的高暴氧量下出现。初步探讨了吸附和氧化机理。CLS, AES and XPS measurements have been used to study oxygen adsorption onto the ion bombarded and annealed InP(111) surface and the initial stages of oxidation. At low oxygen exposure, it has been observed that oxygen is adsorbed on sites above the In island, oxide of In can be observed at exposure of 105 LO2, but oxide of P begins to appear at high exposure of 108 LO2. The mechanism of adsorption and oxidation has been discussed briefly.

UR - https://www.scopus.com/pages/publications/0022025880

M3 - Journal article

AN - SCOPUS:0022025880

SN - 0253-4177

VL - 6

SP - 190

EP - 194

JO - 半导体学报

JF - 半导体学报

IS - 2

ER -

氧在InP(111)面上吸附的CLS、AES和XPS研究

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